EL2 deep-level transient study in semi-insulating GaAs using positron-lifetime spectroscopy

EL2 deep-level transient study in semi-insulating GaAs using positron-lifetime spectroscopy

Electron emission from deep level defects EL2 and EL6 in semi- insulating GaAs observed by positron drift velocity transient measurements

Field effect on positron diffusion in semi-insulating GaAs.

The role of EL2 in the infrared transmission images of defects in semi-insulating GaAs

725 Abstract—Infrared transmission images from GaAs semi insulating wafers were considered for years as directly related to the quantum absorption by electrons on fundamental states of deep centers, especially EL2. The satisfying correspondence of these images with the dislocations revealed by etching or X ray topography or infrared tomography led to the opinion that a strong concentration of E...

Verification of EL2 electronic absorption effect on charge transfer in semi-insulating GaAs.

The electronic absorption of EL2 centers has been clarified to be related to the electron and hole photoionizations, and the transition from its ground state to metastable state, respectively. Under an illumination with a selected photon energy in the near infrared region, these three processes with different optical cross sections will show different kinetics against the illumination time. It ...